K1050X Plasma Etcher / Plasma Asher
K1050X plasma etcher / plasma asher chamber and sample draw
The K1050X plasma etcher / plasma asher is designed to meet the requirements of research and development and small-scale production for a wide and varied range of plasma etching, plasma ashing and plasma cleaning applications. Built to withstand heavy use (24 hours a day for some plasma ashing schedules) the K1050X plasma etcher / plasma asher features microprocessor control with automatic operation and offers durability and simplicity of operation. Barrel systems plasma etch or plasma ash isotropically (in all directions) and are suitable for the majority of applications.
- Drawer type sample stage - gives easy convenient sample access.
- Micro-controller: fully programmable by the operator - easy flexible operation.
- Fully automatic operation
- Modern solid state RF power supply - rugged and reliable.
- Automatic tuning of forward and reflected power - ensures optimum power conditions for plasma ashing and plasma etching protocols
- LCD display - operator sees all conditions (vacuum, RF power, elapsed time) during operation.
- Two gas flow meters - allows precise control and mixing of process gases - especially useful for plasma etching processes
- Pump down to predetermined vacuum before admitting gases.
- Vent control - minimal sample disturbance (especially useful of fine plasma ashed samples
APPLICATIONS
Applications for this technique are extremely varied and this summary gives an indication of the type of problems the K1050X plasma etcher / plasma asher can solve. For further information please see the Applications page:
- Asbestos and man-made mineral fibre detection plasma ashing preparation techniques. UK Health & Safety Executive method for detecting man-made mineral fibre (including asbestos) (pdf file).
- Plasma etching (removal) of photoresist and epi-layers.
- Low temperature plasma ashing of organic materials (e.g. epoxies, filters, foodstuff, etc.).
- Surface treatment of plastics for hydrophobic to hydrophilic conversion.
- Improving painting and inking characteristics of plastics.
- Plasma etching and plasma ashing of organic samples for SEM and TEM examination.
- Plasma cleaning SEM, TEM and SPM parts.
THE RF PLASMA ETCHING / PLASMA ASHING PROCESS
Low temperature, "dry" and controllable.
The K1050X plasma etcher / plasma asher uses a low pressure RF induced gaseous discharge to modify sample surfaces or remove sample material in a gentle controlled way. A significant advantage over alternative methods is that the plasma etching and ashing processes are dry (no wet chemicals needed) and takes place at relatively low temperatures.
A wide range of surface modification methods are available, using a variety of process gases. With oxygen (or air) as the process gas the molecules disassociate into chemically active atoms and molecules - the resulting 'combustion' products are conveniently carried away in the gas stream by the vacuum system.
ABOUT THE K1050X RF PLASMA ETCHER / PLASMA ASHER
Chamber, sample handling and gas control
The K1050X has a 10cm diameter x 15 cm long quartz chamber horizontally mounted with a slide
out sample drawer and viewing window. Evacuation of the chamber is achieved by an optional
50 l/min mechanical rotary vacuum pump with exhaust mist filter. Ingress of reactive gases
is controlled by two built-in flow-meters backed by solenoid valves.
Power, tuning and vacuum monitoring
RF power of up to 100 watts at 13.56 MHz is available and can be infinitely controlled and
pre-set to required values. Automatic tuning of forward and reflected power is standard.
Forward power and vacuum levels are indicated by the digital display.
Automated microprocessor control
The K1050X is fully automatic. Control parameters for time, power and vacuum are easy to
preset and can be monitored and adjusted throughout the process run.
K1050X process chamber during operation
K1050X during operation. Note display of power, vacuum and elapsed time.
"Autotuning" of RF power for optimum control and reproducibility During the plasma process the 'autotune' facility ensures that the RF power is automatically impedance matched to any variation in the system or loading. By this means conditions in the chamber are maintained at their optimum - this is important as it gives faster reaction times, reproducibility of results and protects the power supply during the RF cycle.
Pumping options
A working system requires only the addition of a specified rotary pump. A Fomblinised rotary
pump (E5OO5GZ) is strongly recommended for safety reasons when applications involve the use
of oxygen as a process gas. Fomblin oil (E5OO5Z) must be ordered with the pump. Where oil
based rotary pumps need to be avoided Quorum offer dry pumping options (see specifications).
A turbomolecular pumped version is available (please ask for information on the K1050T).
Options for reactive gases
Reactive process gases, such as CF4, significantly reduce the life of the standard Pirani
gauge. Therefore use of the optional EK4221 Capacitance Manometer for vacuum measurement
is essential.
OPTIONS
E5005F RV3 50 l/min 115-230V 50-60Hz rotary vacuum pump with oil mist filter.E5005FZ RV3 50 l/min 115-230V 50-60Hz "Fomblinised" rotary vacuum pump with oil mist filter.
E5005Z 1 kg of Fomblin oil.
E5006 Oil mist filter (spare).
EK3171 XDS5 scroll pump
EK4221 capacitance manometer
AL090243-1 spares kit
Specification
Plasma Technical Brief (PDF file)
Plasma Reactor FAQs
Site Requirments
Spares Kit for K1050X
K1050X one year service contract (PDF file)
K1050X three year service contract (PDF file)
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